IRFBA34N50C 6/2/00 www.irf.com 1 pd- 93931 smps mosfet hexfet ? power mosfet l switch mode power supply (smps) l uninterruptible power supply l high speed power switching benefits applications l low gate charge qg results in simple drive requirement l improved gate, avalanche and dynamic dv/dt ruggedness l fully characterized capacitance and avalanche voltage and current v dss r ds(on) typ. i d 500v 0.070 w 40a parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 40 i d @ t c = 100c continuous drain current, v gs @ 10v 25 a i dm pulsed drain current ? 160 p d @t c = 25c power dissipation 310 w linear derating factor 2.5 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c recommended clip force 20 n absolute maximum ratings symbol parameter typ. max. units e as single pulse avalanche energy ? CCC 480 mj i ar avalanche current ? CCC 34 a e ar repetitive avalanche energy ? CCC 31 mj avalanche characteristics symbol parameter typ. max. units r q jc junction-to-case CCC 0.40 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 58 thermal resistance provisional super - 220?
IRFBA34N50C 2 www.irf.com provisional symbol parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.5 v t j = 25c, i s = 24a, v gs = 0v ? t rr reverse recovery time CCC 510 770 ns t j = 125c, i f = 20a q rr reverse recoverycharge CCC 11 17 c di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) s d g diode characteristics 40 160 a symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 500 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.68 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC 0.070 0.075 w v gs = 10v, i d = 24a ? v gs(th) gate threshold voltage 3.5 CCC 5.5 v v ds = v gs , i d = 250a CCC CCC 25 a v ds = 500v, v gs = 0v CCC CCC 250 v ds = 400v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v static @ t j = 25c (unless otherwise specified) i gss i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. ? i sd 20a, di/dt 42a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 0.83mh, r g = 25 w , i as = 34a, ? pulse width 300s; duty cycle 2%. symbol parameter min. typ. max. units conditions g fs forward transconductance 20 CCC CCC s v ds = 50v, i d = 20a q g total gate charge CCC 190 CCC i d = 20a q gs gate-to-source charge CCC 45 CCC nc v ds = 400v q gd gate-to-drain ("miller") charge CCC 90 CCC v gs = 10v, ? t d(on) turn-on delay time CCC 23 CCC v dd = 250v t r rise time CCC 29 CCC i d = 20a t d(off) turn-off delay time CCC 55 CCC r g = 1.3 w t f fall time CCC 6.3 CCC v gs = 10v, ? c iss input capacitance CCC 6330 CCC v gs = 0v c oss output capacitance CCC 3600 CCC v ds = 25v c rss reverse transfer capacitance CCC 140 CCC pf ? = 1.0mhz c oss output capacitance CCC 15150 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 140 CCC v gs = 0v, v ds = 400v, ? = 1.0mhz c oss eff. effective output capacitance CCC 460 CCC v gs = 0v, v ds = 0v to 400v ? dynamic @ t j = 25c (unless otherwise specified) ns
IRFBA34N50C www.irf.com 3 provisional super-220? package outline ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 6/00
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